Heteroepitaxy
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Heteroepitaxy is a kind of epitaxy performed with materials that are different from each other. In heteroepitaxy, a crystalline film grows on a crystalline substrate or film of another material. This technology is often applied to growing crystalline films of materials of which single crystals cannot be obtained and to fabricating integrated crystalline layers of different materials.
Examples include gallium nitride (GaN) on sapphire or aluminium gallium indium phosphide (AlGaInP) on gallium arsenide (GaAs).
