Talk:Active pixel sensor
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I will be adding much more to this in the coming days. I recently completed a masters thesis on this matter and would like to contribute. --MattCohen 23:23, 8 May 2006 (UTC)
I slightly disagree with paragraph 2 as it implies that the APS concept was "validated" by JPL in the mid 1990's. In reality the APS concept was in full-scale production as early as 1978 for use in Infrared Focal Plane Arrays (IRFPA). Although these devices were CMOS / InGaAs or HgCdTe hybrids, the only superficial difference with the JPL CMOS devices was that the photodiodes were not integrated into the readout substrate.
It is often spun that CMOS APS devices have relatively new and novel detection and readout architectures but the IR FPA designers had been there long before.
For more information read:
"The Infrared and Electro-Optical Systems Handbook: Volume 3 - Electro-Optical Components - Chapter 5 -Readout electronics for infrared sensors" John L. Vampola (1993) - A great text, one of the first books on CMOS imager array design
"Infrared readout electronics: a historical perspective" M J. Hewitt, J L. Vampola (1994) SPIE Vol.2226
"General noise processes in hybrid infrared focal plane arrays" M D. Nelson, J F. Johnson, T S. Lomheim (1991)
T.B. 30.08.06
- I've added this to the page, though someone with deeper subject knowledge needs to review my changes! - David Gerard 12:17, 21 September 2006 (UTC)
