Talk:Ion implantation
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[edit] Silicon on Insulator
Contextualized SmartCut in terms of generic wafer bonding. Technique is novel and widely used and deserves inclusion but previous text read like a sales brochure for SOITEC. Irene Ringworm 19:11, 29 December 2006 (UTC)
Is it right to say that a SOI MosFet is a 250 nm channel of crystaline Si between two amorphous SiO2 layers? The upper interface is sharp, while the lower is gradual. Above the upper SiO2 is the front gate and the substrate serves as the back gate Arnero 07:48, 1 April 2007 (UTC)
[edit] Safety?
The "safety" section seems worse than useless. Life is dangerous, and coming into accidental contact with an ion implantation device ranks low on the List of Things to Worry About. It's also very poorly written and confusing.
The writing could be fixed, but it would be best to just dump it. 12.103.251.203 02:32, 13 February 2007 (UTC)
