Optical beam induced current
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Optical beam induced current (OBIC) is a semiconductor analysis technique performed using laser signal injection. The technique induces the creation of electron–hole pairs in the semiconductor sample through the use of the microscope's laser source. This technique is used in semiconductor failure analysis in order to locate buried diffusion regions, damaged junctions and gate oxide shorts.[1]
[edit] Use of OBIC for FIB milling end-point detection
The OBIC technique may be used to detect the point at which a FIB milling operation in progress must be terminated. This is accomplished by using a laser to induce a photocurrent in the silicon while simultaneously monitoring the device power supply for changes. The changes detected are proportional to the thickness of the silicon being milled by the FIB. [2]
[edit] Notes
- ^ Cole 2004, p. 411
- ^ Antoniou 2004, p. 72
[edit] References
- Cole, Ed & et al (2004), "Beam-Based Defect Localization Methods", Microelectronics Failure Analysis, ISBN 0-87170-804-3.
- Antoniou, Nicholas (2004), "The Process of Editing Circuits Through the Bulk Silicon", Microelectronics Failure Analysis, ISBN 0-87170-804-3.
