Talk:Plasma ashing
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"Plasma Ashing" and "Fluorine" does not really fit together, although the reaction with fluorine is often an oxidation reaction. However, this seems not to be meant here. In fact, fluorine itself and fluorine atoms originating from fluorine containing precursors are broadly used for "Plasma Etching" / "Thermal Ething" e.g. in semiconductors. Unfortunately both key words are missing. The term "etching" appears, though, but the discussion is currently limited to etching by wet acids. Even here an extension to the other etching regimes such as etching by basic agents or complexing media is needed. Furthermore, the use of "Plasma Ashing " is not limited to resist removal in semiconductors. "Plasma Ashing" is also broadly used e.g. in analytics to oxidise organic materials.
[edit] Why?
Why would one want to remove photoresist from an eched waifer?--Akako|☎ 19:02, 27 October 2005 (UTC)
Resist is removed to prepare the wafer for the next deposition or lithogrpahic step.
